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MTP5N40E - TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM

Features

  • e.
  • applied drain voltage when the source.
  • drain diode has undergone forward bias. The curve shows the limitations of IFM and peak VDS for a given rate of change of source current. It is applicable when waveforms similar to those of Figure 11 are present. Full or half.
  • bridge PWM DC motor controllers are common.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP5N40E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET Designer's MTP5N40E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
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