| Part number | MTV16N50E |
|---|---|
| Datasheet | MTV16N50E_Motorola.pdf |
| File Size | 331.02 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET 16 AMPERES 500 VOLTS |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV16N50E/D Advance Information TMOS E-FET .™ Power Field Effect Transistor D 3 PAK for Surface Mount N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition, this advanced TMOS E FET is designed to withstand...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MTV16N50E | Power Field Effect Transistor | ON Semiconductor |
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTV10N100E | TMOS POWER FET 10 AMPERES 1000 VOLTS |
| MTV20N50E | TMOS POWER FET |
| MTV25N50E | TMOS POWER FET |
| MTV32N20E | TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM |
