Datasheet Summary
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Designer's
TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole N- Channel Enhancement- Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage- blocking capability without degrading performance over time. In addition, this advanced TMOS E- FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain- to- source diode with a fast recovery time. Designed for high .. voltage, high speed switching applications in power supplies, converters and PWM motor...