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MTW26N15E - TMOS POWER FET

Datasheet Summary

Features

  • stive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 5000 4000 C,.

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Datasheet Details

Part number MTW26N15E
Manufacturer Motorola
File Size 144.80 KB
Description TMOS POWER FET
Datasheet download datasheet MTW26N15E Datasheet
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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW26N15E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits www.DataSheet4U.com where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
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