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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTW8N60E/D
™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole
Designer's
MTW8N60E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
MTW8N60E Datasheet
