MTW8N60E datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MTW8N60E |
|---|---|
| Datasheet | MTW8N60E_Motorola.pdf |
| File Size | 70.77 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW8N60E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW8N60E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition, this...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MTW8N60E | TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM | ON Semiconductor |
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTW8N50E | TMOS POWER FET |
| MTW10N100E | TMOS POWER FET |
| MTW10N40E | TMOS E-FET POWER FIELD EFFECT TRANSISTOR |
| MTW14N50E | TMOS POWER FET |
| MTW16N40E | TMOS POWER FET |
| MTW20N50E | Power MOSFET |
| MTW23N25E | TMOS POWER FET 23 AMPERES 250 VOLTS |
| MTW24N40E | TMOS POWER FET 24 AMPERES 400 VOLTS |
| MTW26N15E | TMOS POWER FET |
| MTW32N20E | TMOS POWER FET |
