MTW8N60E
MTW8N60E is TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM manufactured by Motorola Semiconductor.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole
Designer's
Motorola Preferred Device
N- Channel Enhancement- Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage- blocking capability without degrading performance over time. In addition, this advanced TMOS E- FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain- to- source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies,...
