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MTW8N60E - TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM

Key Features

  • 10000 VGS = 0 V Ciss TJ = 25°C Coss 100 Crss 100 VDS, DRAIN.
  • TO.
  • SOURCE.

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Datasheet Details

Part number MTW8N60E
Manufacturer onsemi
File Size 206.70 KB
Description TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM
Datasheet download datasheet MTW8N60E Datasheet

Full PDF Text Transcription (Reference)

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MTW8N60E Preferred Device Power MOSFET 8 Amps, 600 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.