MTY14N100E
MTY14N100E is TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM manufactured by Motorola Semiconductor.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor
Designer's
Motorola Preferred Device
N- Channel Enhancement- Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high energy in the avalanche and mutation modes. This new energy efficient design also offers a drain- to- source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer...
