MTY14N100E datasheet by onsemi.
| Part number | MTY14N100E |
|---|---|
| Datasheet | MTY14N100E-ONSemiconductor.pdf |
| File Size | 205.28 KB |
| Manufacturer | onsemi |
| Description | Power Field Effect Transistor |
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MTY14N100E TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and mutation modes. This new energy efficient design also offers a drain−to−source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other...
View MTY14N100E datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MTY14N100E | TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM | Motorola |
| Part Number | Description |
|---|---|
| MTY16N80E | Power Field Effect Transistor |
| MTY20N50E | Power MOSFET |
