MTY14N100E Description
MTY14N100E TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and mutation modes. This new energy efficient design also offers a drain−to−source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other...