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MW4IC2230GMBR1 - RF LDMOS Wideband Integrated Power Amplifiers

General Description

10 µF, 35 V Tantalum Capacitors 8.2 pF 100B Chip Capacitors 1.8 pF 100B Chip Capacitors 0.3 pF 100B Chip Capacitor 1.8 kW Chip Resistors (1206) Part Number TAJD106K035 100B8R2CW 100B1R8BW 100B0R3BW Manufacturer AVX ATC ATC ATC MW4IC2230MBR1 MW4IC2230GMBR1 MOTOROLA RF DEVICE DATA For More Informatio

Key Features

  • . Output Power versus Input Power 1.E+09 MTTF FACTOR (HOURS X AMPS 2 ) 3rd Stage 2nd Stage 1.E+07 1st Stage Figure 8. Delay versus Frequency 1.E+08 1.E+06 1.E+05 1.E+04 90 100 110 120 130 140 150 160 170 180 190 TJ,.

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MW4IC2230/D The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip design makes it usable from 1600 to 2400 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, CDMA and W - CDMA. Final Application Typical Single - carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 60 mA, IDQ2 = 350 mA, Pout = 5 Watts Avg., f = 2140 MHz, Channel Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.