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MXR3866
CASE 345-01, STYLE 1
SOT-89 RF TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Operating and Storage Junction Temperature Range
Symbol vCEO vCBO v EBO
ic
Tj, Tstg
Value 30 55 3.5
0.4
- 55 to + 1 50
Unit
V V V A
°C
THERMAL CHARACTERISTICS
Characteristic
*Total Device Dissipation, T/ = 25°C Derate above 25°C
Symbol PD
Storage Temperature
T stg
*Thermal Resistance Junction to Ambient
R 0JA
•Package mounted on 99.5% alumina 10 x 12 x 0.6 mm.
Max
1.0 8.0 150 125
Unit
Watt
mW/X
°C °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage dC = 5.
MXR3866 Datasheet
