MXR9745RT1 - 31.5 dBm / 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	MXR9745RT1
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	53.39 KB
Description	31.5 dBm / 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
Datasheet	MXR9745RT1 Datasheet

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MXR9745T1/D Advance Information The RF Small Signal Line Silicon Lateral FET MXR9745T1 MXR9745RT1 31.5 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET N–Channel Enhancement–Mode MOSFET Designed for use in low voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems. • Performance Specifications at 6 Volt, 850 MHz: Output Power = 31.5 dBm Min Power Gain = 8.5 dB Typ Efficiency = 60% Min • Guaranteed Ruggedness at Load VSWR = 20:1 • Available in Tape and Reel Packaging Options: T1 Suffix = 1,000 Units per Reel • MXR9745RT1 is Gate–Drain Pin Out Reversed.