MXR9745RT1
MXR9745RT1 is 31.5 dBm / 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET manufactured by Motorola Semiconductor.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Advance Information The RF Small Signal Line Silicon Lateral FET
MXR9745T1 MXR9745RT1
31.5 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
N- Channel Enhancement- Mode MOSFET
Designed for use in low voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.
- Performance Specifications at 6 Volt, 850 MHz: Output Power = 31.5 dBm Min Power Gain = 8.5 dB Typ Efficiency = 60% Min
- Guaranteed Ruggedness at Load VSWR = 20:1
- Available in Tape and Reel Packaging Options: T1 Suffix = 1,000 Units per Reel
- MXR9745RT1 is Gate- Drain Pin Out Reversed. All Electricals...
