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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Advance Information The RF Small Signal Line Silicon Lateral FET
MXR9745T1 MXR9745RT1
31.5 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
N–Channel Enhancement–Mode MOSFET
Designed for use in low voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems. • Performance Specifications at 6 Volt, 850 MHz: Output Power = 31.5 dBm Min Power Gain = 8.5 dB Typ Efficiency = 60% Min • Guaranteed Ruggedness at Load VSWR = 20:1 • Available in Tape and Reel Packaging Options: T1 Suffix = 1,000 Units per Reel • MXR9745RT1 is Gate–Drain Pin Out Reversed.
MXR9745T1 Datasheet
