PZT751T1 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PZT751T1/D PNP Silicon Planar Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT- 223 package which is designed for medium power surface mount applications. - High Current: 2.0 Amp - The SOT- 223 Package can be soldered using wave or reflow. - SOT- 223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die - Available in 12 mm Tape and Reel Use PZT751T1 to order the 7 inch/1000 unit reel. Use PZT751T3 to order the 13 inch/4000 unit reel. - NPN plement is PZT651T1 COLLECTOR 2, 4 BASE 1 Motorola Preferred Device SOT- 223 PACKAGE HIGH CURRENT PNP SILICON TRANSISTOR SURFACE MOUNT 2 3 .. EMITTER 3 CASE 318E-04, STYLE 1 TO-261AA MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 60 80 5.0 2.0 0.8 6.4 - 65 to 150 150 Unit Vdc Vdc Vdc Adc Watts m W/°C °C °C DEVICE MARKING ZT751 THERMAL CHARACTERISTICS Thermal Resistance from Junction- to- Ambient in Free Air Maximum Temperature for Soldering Purposes Time in Solder Bath RθJA TL 156 260 10 °C/W °C Sec 1. Device mounted on a FR- 4 glass epoxy printed circuit board using minimum remended footprint. Thermal Clad is a trademark of the Bergquist pany Preferred devices are Motorola remended choices for future use and best overall value. REV 1 © Motorola, Inc. 1996 Motorola Small- Signal Transistors, FETs and Diodes Device Data ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics Symbol Min Max Unit OFF...