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XBRP400100CTL - SCHOTTKY BARRIER RECTIFIER

Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes.
  • Highly Stable Oxide Passivated Junction.
  • Guardring for Stress Protection.
  • Matched Dual Die Construction; May be Paralleled for High Current Output.
  • Low Forward Voltage 1 Mechanical Characteristics:.
  • Case: Epoxy, Molded with Metal Heatsink Base 3.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by XBRP400100CTL/D Product Preview SWITCHMODE™ Schottky Power Rectifier POWERTAP II™ Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes.
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