Datasheet Summary
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by XBRP40045CTL/D
Product Preview
SWITCHMODE™ Schottky Power Rectifier
POWERTAP II™ Package
. . . employing the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes.
- Highly Stable Oxide Passivated Junction
- Guardring for Stress Protection
- Matched Dual Die Construction; May be Paralleled for High Current Output
- Low Forward Voltage 1 Mechanical Characteristics:
- Case: Epoxy,...