Y100N10E Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY100N10E/D ™Designer's Data Sheet TMOS E-FET.™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and mutation modes. This new energy efficient design also offers a drain to source diode with fast recovery time. Designed for high voltage, high speed...