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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 1N5817/D
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity protection diodes. • Extremely Low vF • Low Stored Charge, Majority Carrier Conduction • Low Power Loss/High Efficiency Mechanical Characteristics • Case: Epoxy, Molded • Weight: 0.
1N5818 Datasheet
