1N5818 Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 1N5817/D Axial Lead Rectifiers . employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry.
1N5818 Key Features
- Extremely Low vF
- Low Stored Charge, Majority Carrier Conduction
- Low Power Loss/High Efficiency Mechanical Characteristics
- Case: Epoxy, Molded
- Weight: 0.4 gram (approximately)
- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
- Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 1/16″ from case
- Shipped in plastic bags, 1000 per bag
- Available Tape and Reeled, 5000 per reel, by adding a “RL” suffix to the part number
- Polarity: Cathode Indicated by Polarity Band
