MRF8S26060HSR3
MRF8S26060HSR3 is RF Power Field Effect Transistors manufactured by Motorola Semiconductor.
- Part of the MRF8S26060HR3 comparator family.
- Part of the MRF8S26060HR3 comparator family.
Freescale Semiconductor Technical Data
Document Number: MRF8S26060H .. Rev. 0, 4/2010
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA and LTE base station applications with frequencies from 2620- 2690 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
- Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 15.5 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency 2620 MHz 2655 MHz 2690 MHz Gps (dB) 16.3 16.3 16.3 hD (%) 33.2 33.0 32.9 Output PAR (dB) 6.3 6.3 6.2 ACPR (dBc)...
