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SLD120N03T - 30V N-Channel MOSFET

General Description

This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology.

This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • - N-Channel:30V 120A RDS(on)Typ= 2.6mΩ@VGS = 10 V RDS(on)Typ= 3.6mΩ@VGS =4.5 V - Very Low On-resistance RDS(ON) - Low Crss - Fast switching - 100% avalanche tested - Improved dv/dt capability G S D D-PAK D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS PD R θJC TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche E.

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Datasheet Details

Part number SLD120N03T
Manufacturer Msemitek
File Size 759.60 KB
Description 30V N-Channel MOSFET
Datasheet download datasheet SLD120N03T Datasheet

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SLD120N03T SLD120N03T 30V N -Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Application PWM Application Load Switch Power Management Features - N-Channel:30V 120A RDS(on)Typ= 2.6mΩ@VGS = 10 V RDS(on)Typ= 3.6mΩ@VGS =4.