SLD130N04T Overview
Description
This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- N-Channel:40V 130A RDS(on)Typ= 2.5mΩ@VGS = 10 V RDS(on)Typ= 3.1mΩ@VGS =4.5 V
- Very Low On-resistance RDS(ON)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability D G S D-PAK D G S
