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SLD30L03A - N- and P-Channel MOSFET

General Description

This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology.

This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • - N-Channel: 30V 25A RDS(on)Typ= 9mΩ@VGS = 10 V RDS(on))Typ= 13mΩ@VGS = 4..5V - P-Channel: -30V- 20A RDS(on))Typ= 23mΩ@VGS = -10 V RDS(on))Typ=34.5mΩ@VGS = -4.5V - Very Low On-resistance RDS(ON) - Low Crss - Fast switching - 100% avalanche tested - Improved dv/dt capability D1 D2 TO-252-4L G1 G2 S1 N-Channel S2 P-Channel Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS PD R θJc TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC.

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Datasheet Details

Part number SLD30L03A
Manufacturer Msemitek
File Size 659.14 KB
Description N- and P-Channel MOSFET
Datasheet download datasheet SLD30L03A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SLD30L03A SLD30L03A N And P-Channel Enhancement Mode MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Application  Battery Protection  Load Switch  Power Management Features - N-Channel: 30V 25A RDS(on)Typ= 9mΩ@VGS = 10 V RDS(on))Typ= 13mΩ@VGS = 4..5V - P-Channel: -30V- 20A RDS(on))Typ= 23mΩ@VGS = -10 V RDS(on))Typ=34.5mΩ@VGS = -4.