SLD65R600E7 Overview
This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies.
SLD65R600E7 Key Features
- 8A, 650V, RDS(onTyp =510mΩ@VGS = 10 V
- Low gate charge(typ. Qg =10.1nC)
- High ruggedness
- Ultra fast switching
- 100% avalanche tested
- Improved dv/dt capability