SLD65R600E7 Overview
Description
This Power MOSFET is produced using Msemitekās advanced Superjunction MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- Low gate charge(typ. Qg =10.1nC)
- High ruggedness
- Ultra fast switching
- 100% avalanche tested
- Improved dv/dt capability D D G D S TO-220F G S D-PAK G S