Datasheet Details
| Part number | SLH60R041GTDI |
|---|---|
| Manufacturer | Msemitek |
| File Size | 1.25 MB |
| Description | 600V N-Channel MOSFET |
| Datasheet |
 SLH60R041GTDI Datasheet
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General Description
This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- - 650V@Tj=150℃ - 70A,600V, RDS(on) =37.5mΩ@VGS = 10 V - Low gate charge(typ. Qg =136nC) - High ruggedness - Ultra fast switching - 100% avalanche tested - Improved dv/dt capability D G D S TO-247 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current.
- - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current.
- - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Ener.