SLH60R041GTDI - 600V N-Channel MOSFET

Product Overview

Msemitek

Part number	SLH60R041GTDI
Manufacturer	Msemitek
File Size	1.25 MB
Description	600V N-Channel MOSFET
Datasheet	SLH60R041GTDI Datasheet
Additional preview pages of the SLH60R041GTDI datasheet.

This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology.

- 650V@Tj=150℃ - 70A,600V, RDS(on) =37.5mΩ@VGS = 10 V - Low gate charge(typ. Qg =136nC) - High ruggedness - Ultra fast switching - 100% avalanche tested - Improved dv/dt capability D G D S TO-247 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current.
- Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current.
- Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Ener.

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Published: Mar 15, 2025 |