SLH60R041GTDI - 600V N-Channel MOSFET

Product Overview

Msemitek

Datasheet Details

Part number	SLH60R041GTDI
Manufacturer	Msemitek
File Size	1.25 MB
Description	600V N-Channel MOSFET
Datasheet	SLH60R041GTDI Datasheet
Additional preview pages of the SLH60R041GTDI datasheet.

SLH60R041GTDI Product details

Description

This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

- 650V@Tj=150℃ - 70A,600V, RDS(on) =37.5mΩ@VGS = 10 V - Low gate charge(typ. Qg =136nC) - High ruggedness - Ultra fast switching - 100% avalanche tested - Improved dv/dt capability D G D S TO-247 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current.
- Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current.
- Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Ener.

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Published: Mar 15, 2025 |