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SLH60R043E7D - 600V N-Channel MOSFET

General Description

This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • - 65A, 600V@ TJ,max, RDS(on)Typ =36mΩ@VGS = 10 V - Fast Recovery Body-Diode - Ultra high ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G D S TO-247 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive A.

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Datasheet Details

Part number SLH60R043E7D
Manufacturer Msemitek
File Size 807.59 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet SLH60R043E7D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SLH60R043E7D SLH60R043E7D 600V N-Channel Super-JMOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies.