Datasheet Details
| Part number | SLH65R039GTDI |
|---|---|
| Manufacturer | Msemitek |
| File Size | 1.26 MB |
| Description | 650V N-Channel MOSFET |
| Datasheet |
 SLH65R039GTDI Datasheet
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General Description
This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- - 700V@Tj=150℃ - 76A,650V, RDS(on) =35mΩ@VGS = 10 V - Low gate charge(typ. Qg =159nC) - High ruggedness - Ultra fast switching - 100% avalanche tested - Improved dv/dt capability D G D S TO-247 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current.
- - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current.
- - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy.