SLM100N03T Overview
Description
This Power MOSFET is produced using Maple semi‘s advanced planar stripeTRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- N-Channel: 30V100A RDS(on)Typ= 2.9mΩ@VGS = 10 V RDS(on))Typ= 4.8mΩ@VGS = 4.5V
- Very Low On-resistance RDS(ON)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability D DD DD D DD D DFN5*6 G S S SG GSSS
