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SLM150N06G - 60V N-Channel MOSFET

General Description

This Power MOSFET is produced using Msemitek‘s advanced Shielding Gate MOSFET technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • - 150A, 60V, RDS(on)Typ = 1.8mΩ@VGS = 10 V - Very Low On-resistance RDS(ON) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability DD DD D DD D D DFN5.
  • 6 SLM150N06G S S SG GSSS Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed A.

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Datasheet Details

Part number SLM150N06G
Manufacturer Msemitek
File Size 1.07 MB
Description 60V N-Channel MOSFET
Datasheet download datasheet SLM150N06G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SLM150N06G SLM150N06G 60V N-Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced Shielding Gate MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters and high efficiency switching for power management in portable and battery operated products. Features - 150A, 60V, RDS(on)Typ = 1.