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SLM80N06T - 60V N-Channel MOSFET

General Description

This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology.

This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • - N-Channel:60V 80A RDS(on)Typ= 6.1mΩ@VGS = 10V RDS(on)Typ= 7.1mΩ@VGS = 4.5V - Very Low On-resistance RDS(ON) - Low Crss - Fast switching - 100% avalanche tested - Improved dv/dt capability DD DD D DD D D DFN5.
  • 6 S S SG GSSS G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS PD R θJC TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage.

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Datasheet Details

Part number SLM80N06T
Manufacturer Msemitek
File Size 1.02 MB
Description 60V N-Channel MOSFET
Datasheet download datasheet SLM80N06T Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SLM80N06T SLM80N06T 60V N -Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Application PWM Application Load Switch Power Management Features - N-Channel:60V 80A RDS(on)Typ= 6.1mΩ@VGS = 10V RDS(on)Typ= 7.1mΩ@VGS = 4.