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1N5408 - Power Diode

Download the 1N5408 datasheet PDF. This datasheet also covers the 1N5400 variant, as both devices belong to the same power diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 3.0 ampere operation at TA = 75°C with no thermal runaway.
  • High current capability.
  • Low leakage. Ampere General Purpose Rectifiers Absolute Maximum Ratings.
  • TA = 25°C unless otherwise noted Symbol Parameter Value Units IO if (surge) PD Average Rectified Current 0.375" lead length at TA = 75°C Peak Forward Surge Current 8.3ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25°C 3.0 A 200 6.25 W 50 m.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N5400-Multicomp.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 1N5408
Manufacturer Multicomp
File Size 315.74 KB
Description Power Diode
Datasheet download datasheet 1N5408 Datasheet

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Other Datasheets by Multicomp

Part Number Description
1N5404 Power Diode
1N5406 Power Diode
1N5407 Power Diode
1N5221B Zener Diode
1N5226B Zener Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
1N5400 - IN5408 Power Diode 1A to 3A, Standard Axial Rectifiers Features: • 3.0 ampere operation at TA = 75°C with no thermal runaway. • High current capability. • Low leakage. Ampere General Purpose Rectifiers Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units IO if (surge) PD Average Rectified Current 0.375" lead length at TA = 75°C Peak Forward Surge Current 8.3ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25°C 3.0 A 200 6.25 W 50 mW/°C RθJA Thermal Resistance, Junction to Ambient 20 °C/W Tstg Storage Temperature Range TJ Operating Junction Temperature -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.