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2N5882 - Complementary Power Transistor

Download the 2N5882 datasheet PDF. This datasheet also covers the 2N5880 variant, as both devices belong to the same complementary power transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 7.0A.
  • Execellent DC current Gain hFE = 20 - 100 at IC = 6.0A Pin 1. Base 2. Emitter Collector(Case) Maximum Ratings Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 E 25.20 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 Dimensions : Millimetres Characteristic Symbol Rating Collector-Emitter Volt.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N5880-Multicomp.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5882
Manufacturer Multicomp
File Size 292.37 KB
Description Complementary Power Transistor
Datasheet download datasheet 2N5882 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N5880 & 2N5882 Complementary Power Transistors General-purpose power amplifier and switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 7.0A • Execellent DC current Gain hFE = 20 - 100 at IC = 6.0A Pin 1. Base 2. Emitter Collector(Case) Maximum Ratings Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 E 25.20 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.