2N5880 Overview
2N5880 & 2N5882 plementary Power Transistors General-purpose power amplifier and switching applications.
2N5880 Key Features
- Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 7.0A
- Execellent DC current Gain hFE = 20
- 100 at IC = 6.0A
- Peak Base Current Total Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Rang
- VBE(on)
- Base-Emitter Saturation Voltage (IC = 15A, IB = 3.75A)
- Dynamic Characteristics
- 1.0 0.5 5.0 0.5 1.0
- Unit V mA
- Page 2
