2N5880
Features
:
- Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 7.0A
- Execellent DC current Gain h FE = 20
- 100 at IC = 6.0A
Pin 1. Base 2. Emitter Collector(Case)
Maximum Ratings
Dimensions Minimum Maximum
Dimensions : Millimetres
Characteristic
Symbol
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage Collector Current-Continuous
-Peak Base Current Total Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
Thermal Characteristics
VCEO VCBO VEBO
IC ICM IB
TJ, TSTG
5.0 15 30 5.0 160 0.915 -65 to +200
Characteristic Thermal Resistance Junction to Case
Symbol Rθjc
Maximum 1.1
2N5880 2N5882
15 Ampere plementary Silicon Power
Transistors 80 Volts 160 Watts
TO-3
Unit
A W W/°C °C
Unit...
