Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 7.0A.
Execellent DC current Gain hFE = 20 - 100 at IC = 6.0A
Pin 1. Base 2. Emitter Collector(Case)
Maximum Ratings
Dimensions Minimum Maximum
A
38.75
39.96
B
19.28
22.23
C
7.96
9.28
D
11.18
12.19
E
25.20
26.67
F
0.92
1.09
G
1.38
1.62
H
29.90
30.40
I
16.64
17.30
J
3.88
4.36
K
10.67
11.18
Dimensions : Millimetres
Characteristic
Symbol
Rating
Collector-Emitter Volt.
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2N5880 & 2N5882
Complementary Power Transistors
General-purpose power amplifier and switching applications.
Features:
• Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 7.0A
• Execellent DC current Gain hFE = 20 - 100 at IC = 6.0A
Pin 1. Base 2. Emitter Collector(Case)
Maximum Ratings
Dimensions Minimum Maximum
A
38.75
39.96
B
19.28
22.23
C
7.96
9.28
D
11.18
12.19
E
25.20
26.67
F
0.92
1.09
G
1.38
1.62
H
29.90
30.40
I
16.64
17.30
J
3.88
4.36
K
10.67
11.
2N5880 Datasheet
