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2N5883 - Complementary Silicon High-Power Transistors

Key Features

  • http://onsemi. com.
  • Low Collector.
  • Emitter Saturation Voltage.
  • VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage Excellent DC Current Gain.
  • hFE = 20 (min) at IC = 10 Adc High Current Gain Bandwidth Product.
  • ft = 4.0 MHz (min) at IC = 1.0 Adc Pb.
  • Free Packages are Available.
  • 25 AMPERE.

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Datasheet Details

Part number 2N5883
Manufacturer onsemi
File Size 116.11 KB
Description Complementary Silicon High-Power Transistors
Datasheet download datasheet 2N5883 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High−Power Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features http://onsemi.com • Low Collector−Emitter Saturation Voltage − • • • • VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage Excellent DC Current Gain − hFE = 20 (min) at IC = 10 Adc High Current Gain Bandwidth Product − ft = 4.0 MHz (min) at IC = 1.