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2N5884 - Complementary Silicon High-Power Transistors

Download the 2N5884 datasheet PDF. This datasheet also covers the 2N5883 variant, as both devices belong to the same complementary silicon high-power transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • http://onsemi. com.
  • Low Collector.
  • Emitter Saturation Voltage.
  • VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage Excellent DC Current Gain.
  • hFE = 20 (min) at IC = 10 Adc High Current Gain Bandwidth Product.
  • ft = 4.0 MHz (min) at IC = 1.0 Adc Pb.
  • Free Packages are Available.
  • 25 AMPERE.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N5883_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5884
Manufacturer onsemi
File Size 116.11 KB
Description Complementary Silicon High-Power Transistors
Datasheet download datasheet 2N5884 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2N5884 COMPLEMENTARY SILICON HIGH POWER TRANSISTORS STMicroelectronics
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2N5884 PNP Power Transistor INCHANGE
2N5884 Silicon PNP Power Transistors Savantic
2N5884 COMPLEMENTARY SILICON POWER TRANSISTORS Central Semiconductor

Other Datasheets by onsemi

Part Number Description
2N5882 Silicon NPN High-Power Transistor
2N5883 Complementary Silicon High-Power Transistors
2N5885 Complementary Silicon High-Power Transistors
2N5886 Complementary Silicon High-Power Transistors
2N5038 NPN Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High−Power Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features http://onsemi.com • Low Collector−Emitter Saturation Voltage − • • • • VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage Excellent DC Current Gain − hFE = 20 (min) at IC = 10 Adc High Current Gain Bandwidth Product − ft = 4.0 MHz (min) at IC = 1.