2N5886 Description
.. 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices plementary Silicon High−Power Transistors plementary silicon high−power transistors are designed for general−purpose power amplifier and switching.
2N5886 Key Features
- Low Collector-Emitter Saturation Voltage
- VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage Excellent DC Current
- hFE = 20 (min) at IC = 10 Adc High Current Gain Bandwidth Product
- ft = 4.0 MHz (min) at IC = 1.0 Adc Pb-Free Packages are Available
- 80 VOLTS, 200 WATTS
- Continuous Peak Base Current VEB IC 5.0 25 50 Vdc Adc IB 7.5 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C
- 65 to + 200
- For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering
- Rev. 11