2N5886 Datasheet PDF

The 2N5886 is a COMPLEMENTARY SILICON HIGH POWER TRANSISTORS.

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Part Number2N5886 Datasheet
ManufacturerSTMicroelectronics
Overview The 2N5886 is a silicon Epitaxial-Base NPN power transistor mounted in Jedec TO-3 metal case. It is inteded for use in power linear amplifiers and switching applications. INTERNAL SCHEMATIC DIAGRAM . erwise specified) Symbol I CEV I CBO I CEO I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 80 V V CE = 80 V V CB = 80 V V CE = 40 V V EB = 5 V I C = 200 mA 80 T c.
Part Number2N5886 Datasheet
DescriptionPOWER TRANSISTORS
ManufacturerMospec Semiconductor
Overview A A A A . .
Part Number2N5886 Datasheet
DescriptionComplementary Silicon High-Power Transistors
Manufactureronsemi
Overview 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High−Power Transistors Complementary silicon high−power transistors are de. http://onsemi.com
* Low Collector
*Emitter Saturation Voltage
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* VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage Excellent DC Current Gain
* hFE = 20 (min) at IC = 10 Adc High Current Gain Bandwidth Product
* ft = 4.0 MHz (min) at IC = 1.0 A.
Part Number2N5886 Datasheet
DescriptionComplementary Power Transistors
ManufacturerMulticomp
Overview 2N5884 & 2N5886 Complementary Power Transistors General-purpose power amplifier and switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 15A. .
* Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 15A.
* Excellent DC current Gain hFE = 20 ~ 100 at IC = 10A. Pin 1. Base 2. Emitter Collector(Case) Maximum Ratings Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 E 25.20 26.