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2N5886 Datasheet Complementary Silicon High Power Transistors

Manufacturer: STMicroelectronics

Overview: ® 2N5886 HIGH CURRENT SILICON NPN POWER TRANSISTOR s s STMicroelectronics PREFERRED SALESTYPE HIGH CURRENT CAPABILITY APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s 1.

General Description

The 2N5886 is a silicon Epitaxial-Base NPN power transistor mounted in Jedec TO-3 metal case.

It is inteded for use in power linear amplifiers and switching applications.

INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max.

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