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2N5886
HIGH CURRENT SILICON NPN POWER TRANSISTOR
s
s
STMicroelectronics PREFERRED SALESTYPE HIGH CURRENT CAPABILITY
APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
s
1 2
TO-3
DESCRIPTION The 2N5886 is a silicon Epitaxial-Base NPN power transistor mounted in Jedec TO-3 metal case. It is inteded for use in power linear amplifiers and switching applications.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature Value 80 80 5 25 50 7.