STMicroelectronics 2N5886
The 2N5886 is a silicon Epitaxial-Base NPN power transistor mounted in Jedec TO-3 metal case. It is inteded for use in power linear amplifiers and switching applications.| Part No. | 2N5886 |
|---|---|
| Datasheet | 2N5886 Download |
| Manufacturer |  STMicroelectronics |
| Description | COMPLEMENTARY SILICON HIGH POWER TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
GENERAL PURPOSE SWITCHING AND AMPLIFIER s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s 1 2 TO-3DESCRIPTION
INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature Value 80 80 5 25 50 7.5 200 -65 to 200 200 Unit V V V A A A W o o C C January 2000 1/4 2N5886 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.875 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CEV I CBO I CEO I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 80 V V CE = 80 V V CB = 80 V V CE = 40 V V EB = 5 V I C = 200 mA 80 T c = 150 o C Min.
