| Part Number | 2N5884 Datasheet |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview | The 2N5884 and 2N5886 are complementary silicon power transistor in Jedec TO-3 metal case inteded for use in power linear amplifiers and switching applications. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE M. case Thermal Resistance Junction-case Max 0.875 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV I CBO I CEO I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Curr. |
2N5884 Datasheet and Specifications PDF
The 2N5884 is a COMPLEMENTARY SILICON HIGH POWER TRANSISTORS.
| Part Number | 2N5884 Datasheet |
|---|---|
| Description | Complementary Silicon High-Power Transistors |
| Manufacturer | onsemi |
| Overview |
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
2N5884 and 2N5886 are Preferred Devices
Complementary Silicon High−Power Transistors
Complementary silicon high−power transistors are de.
* Low Collector *Emitter Saturation Voltage * * * * * VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage Excellent DC Current Gain * hFE = 20 (min) at IC = 10 Adc High Current Gain Bandwidth Product * ft = 4.0 MHz (min) at IC = 1.0 A. |
| Part Number | 2N5884 Datasheet |
|---|---|
| Description | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR 2N5883, 2N5885 series types are complementary silicon epitaxial base transistors designed for power amplifier and switching applications. MARKING: FULL PART NUMBER TO-3 CAS. . |
| Part Number | 2N5884 Datasheet |
|---|---|
| Description | Silicon PNP Power Transistors |
| Manufacturer | Savantic |
| Overview | ·With TO-3 package ·Complement to type 2N5885 2N5886 ·High power dissipations APPLICATIONS ·They are intended for use in power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Base E. 3 2N5884 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage 2N5883 2N5884 IC=-0.2A ;IB=0 -60 -80 V VCEsat-1 Collector-emitter saturation voltage IC=-15A; IB=-1.5A VCEsat-2 Collector-emitter satura. |