Datasheet Details
| Part number | 2N5884 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.14 KB |
| Description | PNP Power Transistor |
| Datasheet | 2N5884-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2N5884 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.14 KB |
| Description | PNP Power Transistor |
| Datasheet | 2N5884-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO=-80V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -25 A IB Base Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -7.5 A 200 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N5884 isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2N5884 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -15.0A;
IB= -1.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -25.0A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N5884 | COMPLEMENTARY SILICON HIGH POWER TRANSISTORS | STMicroelectronics |
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2N5884 | PNP SILICON POWER TRANSISTORS | Digitron Semiconductors |
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2N5884 | Complementary Silicon High-Power Transistors | ON Semiconductor |
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2N5884 | Silicon PNP Power Transistors | Savantic |
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2N5884 | COMPLEMENTARY SILICON POWER TRANSISTORS | Central Semiconductor |
| Part Number | Description |
|---|---|
| 2N5885 | NPN Transistor |
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| 2N5108 | Silicon NPN Power Transistor |
| 2N5109 | NPN Transistor |
| 2N5202 | NPN Transistor |
| 2N5297 | NPN Transistor |
| 2N5302 | NPN Transistor |
| 2N5345 | PNP Transistor |
| 2N5466 | NPN Transistor |
| 2N5467 | NPN Transistor |