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2N5883 Datasheet PDF

TT 2N5883

SILICON EPITAXIAL PNP TRANSISTOR

Part No. 2N5883
Datasheet 2N5883 Download
Manufacturer
TT
Description SILICON EPITAXIAL PNP TRANSISTOR
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2N5883 datasheet page 1 preview

APPLICATIONS

● Screening Options Available

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage -60V VCEO Collector – Emitter Voltage -60V VEBO Emitter – Base Voltage -5V IC Continuous Collector Current -25A ICM Peak Collector Current -50A IB Base Current -7.5A PD Total Power Dissipation at TC = 25°C 200W Derate Above 25°C 1.14W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. 0.875 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. How
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