TT 2N5883
SILICON EPITAXIAL PNP TRANSISTOR
APPLICATIONS
● Screening Options AvailableABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage -60V VCEO Collector – Emitter Voltage -60V VEBO Emitter – Base Voltage -5V IC Continuous Collector Current -25A ICM Peak Collector Current -50A IB Base Current -7.5A PD Total Power Dissipation at TC = 25°C 200W Derate Above 25°C 1.14W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. 0.875 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. How