Savantic 2N5883
Silicon PNP Power Transistors
DESCRIPTION
●With TO-3 package●Complement to type 2N5885 2N5886
●High power dissipations
APPLICATIONS
●They are intended for use in power linear and switching applications PINNING PIN 1 2 3DESCRIPTION
Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER VCBO Collector-base voltage 2N5883 2N5884 VCEO Collector-emitter voltage 2N5883 2N5884 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal resistance junction to case VALUE -60 -80 -60 -80 -5 -25 -50 -7.5 200 200 -65~200 UNIT V V V A A A W VALUE 0.875 UNIT /W SavantIC Semiconductor Silicon PNP Power Transistors Product Specification 2N5883 2N5884 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Col...