| Part Number | 2N5883 Datasheet |
|---|---|
| Manufacturer | Mospec Semiconductor |
| Overview | A A A A . . |
2N5883 Datasheet PDF
The 2N5883 is a POWER TRANSISTORS.
| Part Number | 2N5883 Datasheet |
|---|---|
| Description | Complementary Silicon High-Power Transistors |
| Manufacturer | onsemi |
| Overview |
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
2N5884 and 2N5886 are Preferred Devices
Complementary Silicon High−Power Transistors
Complementary silicon high−power transistors are de.
http://onsemi.com
* Low Collector *Emitter Saturation Voltage * * * * * VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage Excellent DC Current Gain * hFE = 20 (min) at IC = 10 Adc High Current Gain Bandwidth Product * ft = 4.0 MHz (min) at IC = 1.0 A. |
| Part Number | 2N5883 Datasheet |
|---|---|
| Description | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR 2N5883, 2N5885 series types are complementary silicon epitaxial base transistors designed for power amplifier and switching applications. MARKING: FULL PART NUMBER TO-3 CAS. . |
| Part Number | 2N5883 Datasheet |
|---|---|
| Description | SILICON EPITAXIAL PNP TRANSISTOR |
| Manufacturer | TT Electronics |
| Overview | SILICON EPITAXIAL PNP TRANSISTOR 2N5883 • High Voltage, Low Saturation Voltages. • Hermetic TO3 Metal Package. • Designed For Power Switching and Linear Applications • Screening Options Available AB. . |