2N5880
DESCRIPTION
- With TO-3 package
- Low collector saturation voltage
- plement to type 2N5881 2N5882 APPLICATIONS
- For general-purpose power amplifier and switching applications
PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION
2N5879 2N5880
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL VCBO PARAMETER 2N5879 Collector-base voltage 2N5880 2N5879 VCEO VEBO IC ICM IB PD Tj Tstg Collector-emitter voltage 2N5880 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base -80 -5 -15 -30 -5 160 150 -65~200 V A A A W Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.1 UNIT /W
Savant IC Semiconductor
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Product Specification
Silicon PNP Power Transistors
2N5879 2N5880
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N5879 IC=-0.2A ;IB=0...
