Savantic 2N5880
Silicon PNP Power Transistors
DESCRIPTION
●With TO-3 package●Low collector saturation voltage
●Complement to type 2N5881 2N5882
APPLICATIONS
●For general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter CollectorDESCRIPTION
2N5879 2N5880 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER 2N5879 Collector-base voltage 2N5880 2N5879 VCEO VEBO IC ICM IB PD Tj Tstg Collector-emitter voltage 2N5880 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base -80 -5 -15 -30 -5 160 150 -65~200 V A A A W Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.1 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5879 2N5880 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5879 IC=-0.2A ;IB=0 2N5880 IC=-7A;...