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2N6042 - Bipolar Transistor

Key Features

  •   High DC Current Gain.
  •   Collector-Emitter Sustaining Voltage: V = 100V Min.
  •   Monolithic Construction with Built-in Base-Emitter Shunt Resistors Absolute Maximum Ratings: Parameters Collector Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Total Power Dissipation upto TC = 25°C Derate above 25°C Total Power Dissipation upto T = 25°C Derate above 25°C Operating Junction Temperature Range Storage Tempera.

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Datasheet Details

Part number 2N6042
Manufacturer Multicomp
File Size 314.66 KB
Description Bipolar Transistor
Datasheet download datasheet 2N6042 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Bipolar Transistor Features: •  High DC Current Gain •  Collector-Emitter Sustaining Voltage: V = 100V Min •  Monolithic Construction with Built-in Base-Emitter Shunt Resistors Absolute Maximum Ratings: Parameters Collector Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Total Power Dissipation upto TC = 25°C Derate above 25°C Total Power Dissipation upto T = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol Vceo Vcbo Vebo Ic Icm Ib Ptot Tj Tstg Rth (j-c) Rth (j-a) Unit 100V 5V 8A 16A 120mA 75W 0.6W/°C 2.2W 0.0175W/°C -65° to +150°C -65° to +150°C 1.67°C/W 57°C/W www.element14.com www.farnell.com www.