Description
A Silicon epitaxial PNP Darlington transistor in a TO-220 type Case designed for general-purpose amplifier and Low speed switching circuits.
Features
- High DC Current Gain.
- Collector-Emitter Sustaining Voltage VCEO(SUS)=100V Min.
- Monolithic Construction With Built-in Base-Emitter Shunt Resistors
Pin Configuration: 1. Emitter 2. Base 3. Collector
Maximum Ratings:
Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous
-Peak Base Current Total Device Dissipation -(TC = +25°C),
Derate Above 25°C Total Device Dissipation -(TA = +25°C),
Derate Above 25°C.
2N6124 Datasheet
