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2N6124 - Bipolar Transistor

General Description

A Silicon epitaxial PNP Darlington transistor in a TO-220 type Case designed for general-purpose amplifier and Low speed switching circuits.

Key Features

  •   High DC Current Gain.
  •   Collector-Emitter Sustaining Voltage VCEO(SUS)=100V Min.
  •   Monolithic Construction With Built-in Base-Emitter Shunt Resistors Pin Configuration: 1. Emitter 2. Base 3. Collector Maximum Ratings: Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous -Peak Base Current Total Device Dissipation -(TC = +25°C), Derate Above 25°C Total Device Dissipation -(TA = +25°C), Derate Above 25°C.

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Datasheet Details

Part number 2N6124
Manufacturer Multicomp
File Size 201.71 KB
Description Bipolar Transistor
Datasheet download datasheet 2N6124 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor General Purpose Description: A Silicon epitaxial PNP Darlington transistor in a TO-220 type Case designed for general-purpose amplifier and Low speed switching circuits. Features: •  High DC Current Gain •  Collector-Emitter Sustaining Voltage VCEO(SUS)=100V Min. •  Monolithic Construction With Built-in Base-Emitter Shunt Resistors Pin Configuration: 1. Emitter 2. Base 3.