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2N6123 Datasheet Bipolar Transistor

Manufacturer: Multicomp

Overview: General Purpose Transistor Collector 3 2 Base 1 Emitter.

Datasheet Details

Part number 2N6123
Manufacturer Multicomp
File Size 215.80 KB
Description Bipolar Transistor
Datasheet 2N6123-Multicomp.pdf

General Description

: A silicon NPN transistor in a standard TO-220 type package designed for use in general purpose amplifier and switching applications Maximum Ratings: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Base Current Total Device Dissipation (TC = +25°C) Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO lC IB PD TJ Tstg Rating 80 5 4 1 40 320 -65 to +150 Unit V A W mW/°C °C www.element14.com www.farnell.com www.newark.com Page <1> 23/04/13 V1.0 General Purpose Transistor Electrical Characteristics (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions OFF Characteristics Collector-Emitter Breakdown Voltage (Note 1) Collector Cut-Off Current Emitter Cut-Off Current ON Characteristics (Note 1) V(BR)CEO ICEX ICBO ICEO IEBO IC = 0.1A, IB = 0 VCE = 80V, VEB(off) = 1.5V VCB = 80V, IE = 0 VEB = 80V, IB = 0 VEB = 5V, IC = 0 DC Current Gain Collector - Emitter Saturation Voltage Base - Emitter on Voltage Small Signal Characteristics hFE VCE(sat) VBE(on) VCE = 2V, IC = 1.5A VCE = 2V, IC = 2A IC = 1.5A, IB = 0.15A IC = 4A, IB = 1A IC = 1.5A, VCE = 2V Current Gain-Bandwidth Product fT Small-Signal Current Gain hfe Note 1 : Pulse Test : Pulse Width % 300µs, Duty Cycle % 2% VCE = 4V, IC = 1A, f = 1MHz VCE = 2V, IC = 0.1A, f = 1kHz Min.

Max.

Unit 80 - V 0.1 - mA 1 20 80 - 7 - 0.6 - 1.4 V 1.2 MHz 2.5 - - Dim.

2N6123 Distributor