The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
BAS16
SOT 23 High Speed Switching Diodes
Feature:
• Silicon Planar Epitaxial High-Speed Diode.
Marking BAS16 = A6
Pin configuration 1 = Anode 2 = NC 3 = Cathode
Package Outline Details
Absolute Maximum Ratings
Limiting values
Continuous reverse voltage
Repetitive peak reverse voltage
Repetitive peak forward current
Junction temperature
Forward voltage at IF = 50mA Reverse recovery time when switched from
IF = 10mA to IR = 10mA; RL = 100W; measured at IR = 1mA Recovery charge when switched from IF = 10mA to VR = 5V; RL = 100W
Symbol VR
VRRM IFRM
Tj VF
trr
Qs
Maximum <
Dimensions : Millimetres
Value 75 85 500 150 1.0
4
45
Units V mA °C V nS
pC
Page 1
31/05/05 V1.