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BAS16TT1
Advance Information Silicon Switching Diode
http://onsemi.com MAXIMUM RATINGS (TA = 25°C)
Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms Symbol VR IF IFM(surge) Max 75 200 500 Unit V mA mA 3 CATHODE 1 ANODE
Preferred Device
THERMAL CHARACTERISTICS
Characteristic Total Power Dissipation, TA = 25°C
(1)
3 Symbol PD TJ, Tstg RθJA Max 150 –55 to +150 833 Unit mW °C °C/W 2 1 CASE 463 SOT–416/SC–75 STYLE 2
Operating and Storage Junction Temperature Range Thermal Resistance, Junction to Ambient
(1) Device mounted on FR–4 glass epoxy printed circuit board using the minimum recommended footpad.
BAS16TT1 Datasheet
