BD441 Overview
Description
This TO-126 plastic silicon epitaxial base NPN power transistor intended for use in power linear and switching applications. Collector 3 2 Base 1 Emitter Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Total Device Dissipation at Tc = 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD Tj, Tstg Rating 80 80 5 4 36 -65 to +150 Parameter Symbol Test Conditions OFF Characteristics Collector - Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current ON Characteristics V(BR)CEO ICBO ICES IEBO IC=100mA, IB=0 VCB=80V, IB=0 VCE=80V, VBE=0 VEB=5V, IC=0 DC Current Gain Collector - Emitter Saturation Voltage Base - Emitter On Voltage Small-Signal Characteristics hFE VCE(sat) VBE(on) VCE=5V, IC=10mA VCE=1V, IC=500mA VCE=1V, IC=2A IC=2A, IB=0.2A IC=2A, VCE=1V Current Gain-Bandwidth Product fT VCE=1V, IC=250mA Note 1.
