BD441 Datasheet and Specifications PDF

The BD441 is a Plastic Medium Power Silicon NPN Transistor.

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Part NumberBD441 Datasheet
Manufactureronsemi
Overview BD435, BD437, BD439, BD441 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications. Complementary .
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*Free Package is Available* 4.0 AMPERES POWER TRANSISTORS NPN SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ.
Part NumberBD441 Datasheet
DescriptionPlastic Medium Power Silicon NPN Transistor
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD437/D Plastic Medium Power Silicon NPN Transistor . . . for amplifier and switching applications. Complementary types are BD438 and BD. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ CASE 77
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*225AA TYPE MAXIMUM RATINGS Rating Symbol VCEO VCBO VEBO IC IB Value 45 80 45 80 Unit.
Part NumberBD441 Datasheet
DescriptionNPN Transistor
ManufacturerLGE
Overview BD439/441(NPN) TO-126 Transistor 1. EMITTER 2. COLLECTOR Features 3 2 1 — Amplifier and switching applications 3. BASE MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol Parameter Value . 3 2 1 — Amplifier and switching applications 3. BASE MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage BD439 BD441 60 80 V VCEO Collector-Emitter Voltage BD439 BD441 60 80 V VEBO Emitter-Base Voltage 5V IC Collector Current
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Part NumberBD441 Datasheet
DescriptionNPN Epitaxial Silicon Transistor
ManufacturerFairchild Semiconductor
Overview BD439/441 BD439/441 Medium Power Linear and Switching Applications • Complement to BD440, BD442 respectively NPN Epitaxial Silicon Transistor 1 TO-126 1. Emitter 2.Collector 3.Base Absolute Maximu. N Voltage fT Current Gain Bandwidth Product * Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed Test Condition IC = 100mA, IB = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10mA VCE =1V, IC = 500mA VCE = 1V, IC = 2A IC = 2A, IB = 0.2A VCE =.