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(Standard type)
TESTING (Standard type)
PhotoMOSHE (High-function Economy)
Type 1- Channel (Form B) Type
RELAYS
,,
8.8±0.05 .346±.002
6.4±0.05 .252±.002
3.9±0.2 .154±.008 8.8±0.05 .346±.002
1
2 3
,
6.4±0.05 .252±.002
3.6±0.2 .142±.008
mm inch
6 5 4
FEATURES
1. Form B (Normally-closed) type Has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method.
Cross section of the normally-closed type of power MOS
Passivation membrane
Source electrode Gate electrode
Intermediate insulating
membrane
N+ P+ N+
N+ P+ N+
Gate oxidation membrane
N– N+
Drain electrode
2.
AQV454A Datasheet
